KINETIC AND THERMODYNAMIC ASPECTS OF METAL ORGANIC MBE

被引:7
作者
HECKINGBOTTOM, R
PRIOR, KA
机构
关键词
D O I
10.1016/0039-6028(86)90382-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:38 / 42
页数:5
相关论文
共 15 条
  • [1] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM
    ARTHUR, JR
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) : 2257 - &
  • [2] HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE
    DAPKUS, PD
    MANASEVIT, HM
    HESS, KL
    LOW, TS
    STILLMAN, GE
    [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 10 - 23
  • [3] MBE GROWTH OF HIGH-QUALITY INP USING TRIETHYLINDIUM AS AN INDIUM SOURCE
    KAWAGUCHI, Y
    ASAHI, H
    NAGAI, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (09): : L737 - L739
  • [4] KUBASCHEWSKI O, 1979, METALLURGICAL THERMO, P267
  • [5] MILNES AG, 1973, DEEP IMPURITIES SEMI, P154
  • [6] GROWTH OF HIGH-PURITY GAAS EPILAYERS BY MOCVD AND THEIR APPLICATIONS TO MICROWAVE MESFETS
    NAKANISI, T
    UDAGAWA, T
    TANAKA, A
    KAMEI, K
    [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 255 - 262
  • [7] GAS SOURCE MOLECULAR-BEAM EPITAXY OF GAXIN1-XPYAS1-Y
    PANISH, MB
    SUMSKI, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3571 - 3576
  • [8] GAAS GROWTH IN METAL-ORGANIC MBE
    PUTZ, N
    VEUHOFF, E
    HEINECKE, H
    HEYEN, M
    LUTH, H
    BALK, P
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 671 - 673
  • [9] EFFECT OF OPERATING PRESSURE ON THE PROPERTIES OF GAAS GROWN BY LOW-PRESSURE MOCVD
    TAKAGISHI, S
    MORI, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (12): : L795 - L797
  • [10] EPITAXIAL-GROWTH OF HIGH-PURITY GAAS BY LOW-PRESSURE MOCVD
    TAKAGISHI, S
    MORI, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02): : L100 - L102