CONTROLLED CO2-LASER MELTING OF SILICON

被引：9

作者：

SHEIKBAHAE, M

KWOK, HS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 02期

关键词：

D O I：

10.1063/1.340080

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：518 / 524

页数：7

共 30 条

[1]

[Anonymous], 1982, LASER ANNEALING SEMI

[2] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J].

AUSTON, DH ;

SURKO, CM ;

VENKATESAN, TNC ;

SLUSHER, RE ;

GOLOVCHENKO, JA .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :437-440

[3] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].

BARAFF, GA .

PHYSICAL REVIEW, 1962, 128 (06) :2507-&

[4]

BAUERLE D, 1984, LASER PROCESSING DIA

[5]

BHATTACHARYYA A, 1981, SOLID STATE COMMUN, V36, P671

[6] SUBSTRATE HEATING EFFECTS IN CO2-LASER ANNEALING OF ION-IMPLANTED SILICON [J].

BLOMBERG, M ;

NAUKKARINEN, K ;

TUOMI, T ;

AIRAKSINEN, VM ;

LUOMAJARVI, M ;

RAUHALA, E .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2327-2328

[7]

CELLER GK, 1978, APPL PHYS LETT, V32, P462

[8] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J].

CROWELL, CR ;

SZE, SM .

APPLIED PHYSICS LETTERS, 1966, 9 (06) :242-&

[9]

GRANT WN, 1973, SOLID STATE ELECTRON, V16, P1184

[10]

HASSELBECK M, 1982, J APPL PHYS, V53, P5634

← 1 2 3 →