SUBSTRATE HEATING EFFECTS IN CO2-LASER ANNEALING OF ION-IMPLANTED SILICON

被引：18

作者：

BLOMBERG, M ^{[1
]}

NAUKKARINEN, K ^{[1
]}

TUOMI, T ^{[1
]}

AIRAKSINEN, VM ^{[1
]}

LUOMAJARVI, M ^{[1
]}

RAUHALA, E ^{[1
]}

机构：

[1] UNIV HELSINKI,DEPT PHYS,SF-00170 HELSINKI 17,FINLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 05期

关键词：

D O I：

10.1063/1.332343

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2327 / 2328

页数：2

共 7 条

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[3] ANNEALING OF PHOSPHORUS-ION-IMPLANTED SILICON USING A CO2-LASER [J].

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[4] CO2-LASER ANNEALING OF SILICON [J].

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TUOMI, T ;

BLOMBERG, M ;

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RAUHALA, E .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5634-5640

[5]

SIREGAR MRT, 1980, APPL PHYS LETT, V36, P10

[6]

Smith R.A., 1978, SEMICONDUCTORS

[7] INFRARED ABSORPTION IN N-TYPE SILICON [J].

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FAN, HY .

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