CO2-LASER ANNEALING OF SILICON

被引：13

作者：

NAUKKARINEN, K ^{[1
]}

TUOMI, T ^{[1
]}

BLOMBERG, M ^{[1
]}

LUOMAJARVI, M ^{[1
]}

RAUHALA, E ^{[1
]}

机构：

[1] UNIV HELSINKI,DEPT PHYS,SF-00170 HELSINKI 17,FINLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 08期

关键词：

D O I：

10.1063/1.331446

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5634 / 5640

页数：7

共 17 条

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[2]

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[3]

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[4] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J].

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[5] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J].

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POATE, JM ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :464-466

[6]

CELLER GK, 1979, AIP C P, V50, P381

[7]

FERRIS SD, 1979, AIP C P, V50, P11

[8] LASER ANNEALING OF SILICON-WAFERS AT 10.6 MU-M [J].

HAUCK, JP ;

BEGUWALA, MM ;

HAYES, CL ;

PALYS, RF .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 64 (01) :407-412

[9] OPTICAL HEATING IN SEMICONDUCTORS - LASER DAMAGE IN GE, SI, INSB, AND GAAS [J].

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KRUER, MR ;

BARTOLI, FJ .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) :5513-5522

[10] ANNEALING OF PHOSPHORUS-ION-IMPLANTED SILICON USING A CO2-LASER [J].

MIYAO, M ;

OHYU, K ;

TOKUYAMA, T .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :227-229

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