LOW-FIELD TIME-DEPENDENT DIELECTRIC INTEGRITY

被引：10

作者：

ANOLICK, ES

NELSON, GR

机构：

来源：

关键词：

D O I：

10.1109/TR.1980.5220804

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：217 / 221

页数：5

共 8 条

[1]

Anolick E. S., 1979, 17th Annual Proceedings Reliability Physics, P8, DOI 10.1109/IRPS.1979.362864

[2]

ANOLICK ES, 1975, SPR EL SOC M TOR, V75, P131

[3]

BERENBAUM L, 1974, FAL JOINT M AM CER S

[4]

BERENBAUM L, 1975, SPR EL SOC M TOR, V75, P137

[5]

CROOK DL, 1978, TECHNICAL DIGEST DEC, P444

[6] DIELECTRIC BREAKDOWN INDUCED BY SODIUM IN MOS STRUCTURES [J].

DISTEFANO, TH .

[7] TIME-DEPENDENT BREAKDOWN OF SILICON DIOXIDE FILMS [J].

RAIDER, SI .

[8] TIME-DEPENDENT BREAKDOWN IN SILICON DIOXIDE FILMS [J].

SVENSSON, C ;

SHUMKA, A .