TIME-DEPENDENT BREAKDOWN IN SILICON DIOXIDE FILMS

被引：16

作者：

SVENSSON, C ^{[1
]}

SHUMKA, A ^{[1
]}

机构：

[1] CALTECH,JET PROP LAB,PASADENA,CA 91103

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1975年 / 38卷 / 01期

关键词：

D O I：

10.1080/00207217508920378

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：69 / 80

页数：12

共 13 条

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[6] EFFECT OF MOBILE SODIUM IONS ON FIELD ENHANCEMENT DIELECTRIC BREAKDOWN IN SIO2 FILMS ON SILICON [J].

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[7] DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON .2. INFLUENCE OF PROCESSING AND MATERIALS [J].

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[9] TIME-DEPENDENT BREAKDOWN OF SILICON DIOXIDE FILMS [J].

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[10] NONUNIFORM LATERAL IONIC IMPURITY DISTRIBUTIONS AT SI-SIO2 INTERFACES [J].

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