KINETIC-STUDIES OF THE ANNEALING BEHAVIOR OF A-SI-H P-I-N SOLAR-CELLS

被引：6

作者：

BENNETT, MS ^{[1
]}

NEWTON, JL ^{[1
]}

RAJAN, K ^{[1
]}

ROTHWARF, A ^{[1
]}

机构：

[1] DREXEL UNIV,DEPT ELECT ENGN,PHILADELPHIA,PA 19104

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 09期

关键词：

D O I：

10.1063/1.339195

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3968 / 3975

页数：8

共 19 条

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[8] POSITRON-ANNIHILATION STUDY OF VOIDS IN A-SI AND A-SI-H [J].

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[10] TEMPERATURE-DEPENDENT LIGHT-INDUCED-CHANGES AND ANNEALING OF THE CHANGES IN HYDROGENATED AMORPHOUS-SILICON [J].

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