EFFECT OF RESIDUAL-STRESS ON HOLE MOBILITY OF SOS MOS DEVICES

被引：4

作者：

ONGA, S

HATANAKA, K

KAWAJI, S

NISHI, Y

YASUDA, Y

机构：

[1] GAKUSHUIN UNIV, DEPT PHYS, TOSHIMA KU, TOKYO 171, JAPAN

[2] TOKYO SHIBAURA ELECT CO LTD, TOSHIBA RES & DEV CTR, KAWASAKI, KANAGAWA 210, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 09期

关键词：

D O I：

10.1143/JJAP.17.1587

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1587 / 1592

页数：6

共 12 条

[1] MOBILITY ANISOTROPY AND PIEZORESISTANCE IN SILICON P-TYPE INVERSION LAYERS [J].

COLMAN, D ;

BATE, RT ;

MIZE, JP .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) :1923-&

[2] DIFFUSED DIODES IN SILICON-ON-SAPPHIRE [J].

DUMIN, DJ ;

SILVER, RS .

SOLID-STATE ELECTRONICS, 1968, 11 (03) :353-+

[3]

HATANAKA K, 1977, 2ND P INT C EL PROP, P307

[4]

HYNECEK J, 1974, J APPL PHYS, V45, P2631, DOI 10.1063/1.1663642

[5] MOBILITY HUMP AND INVERSION LAYER SUBBANDS IN SI ON SAPPHIRE [J].

KAWAJI, S ;

HATANAKA, K ;

NAKAMURA, K ;

ONGA, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1976, 41 (03) :1073-1074

[6] ROOM-TEMPERATURE MAGNETORESISTANCE ANISOTROPIES IN PARA-TYPE (001) SI ON SAPPHIRE [J].

OHMURA, Y ;

YOSHII, T ;

YASUDA, Y .

SOLID STATE COMMUNICATIONS, 1976, 20 (03) :203-205

[7] INFLUENCE OF CRYSTALLINE DEFECTS AND RESIDUAL-STRESS ON ELECTRICAL CHARACTERISTICS OF SOS MOS DEVICES [J].

ONGA, S ;

HATANAKA, K ;

KAWAJI, S ;

YASUDA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (02) :413-422

[8] EFFECTS OF CRYSTALLINE DEFECTS ON ELECTRICAL-PROPERTIES IN SILICON FILMS ON SAPPHIRE [J].

ONGA, S ;

YOSHII, T ;

HATANAKA, K ;

YASUDA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 :225-231

[9]

READ WT, 1954, PHILOS MAG, V45, P775

[10] MOBILITY ANISOTROPY OF ELECTRONS IN INVERSION LAYERS ON OXIDIZED SILICON SURFACES [J].

SATO, T ;

TAKEISHI, Y ;

HARA, H ;

OKAMOTO, Y .

PHYSICAL REVIEW B, 1971, 4 (06) :1950-&

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