TRENDS IN SURFACE ATOMIC GEOMETRIES OF COMPOUND SEMICONDUCTORS

[11] SURFACE ATOMIC GEOMETRY OF COVALENTLY BONDED SEMICONDUCTORS - INSB(110) AND ITS COMPARISON WITH GAAS(110) AND ZNTE(110) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 501 - 505

[12] CALCULATION OF LOW-ENERGY-ELECTRON-DIFFRACTION INTENSITIES FROM ZNO (1010) .2. INFLUENCE OF CALCULATIONAL PROCEDURE, MODEL POTENTIAL, AND 2ND-LAYER STRUCTURAL DISTORTIONS [J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4225 - 4240

[13] LOW-ENERGY-ELECTRON-DIFFRACTION ANALYSIS OF ATOMIC GEOMETRY OF ZNO(1010) [J]. PHYSICAL REVIEW B, 1977, 15 (10): : 4865 - 4873

[14] ANALYSIS OF ELEED INTENSITIES FROM ZNTE(110) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 647 - 650

[15] ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES [J]. CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1978, 8 (01): : 69 - 91

[16] SURFACE-STRUCTURES OF COMPOUND SEMICONDUCTORS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 870 - 877

[17] EASTMAN DE, 1980, J VAC SCI TECHNOL, V17, P492, DOI 10.1116/1.570492

[18] LOW-ENERGY ELECTRON-DIFFRACTION FROM SI(111)-2 X 1 - THEORY AND EXPERIMENT [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (05): : L179 - L184

[19] ELECTRON-PAIR REPULSIONS AND MOLECULAR SHAPE [J]. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 1967, 6 (10) : 819 - &

[20] THEORETICAL STUDIES OF SI AND GAAS SURFACES AND INITIAL STEPS IN OXIDATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1274 - 1286

[11] SURFACE ATOMIC GEOMETRY OF COVALENTLY BONDED SEMICONDUCTORS - INSB(110) AND ITS COMPARISON WITH GAAS(110) AND ZNTE(110) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 501 - 505

[12] CALCULATION OF LOW-ENERGY-ELECTRON-DIFFRACTION INTENSITIES FROM ZNO (1010) .2. INFLUENCE OF CALCULATIONAL PROCEDURE, MODEL POTENTIAL, AND 2ND-LAYER STRUCTURAL DISTORTIONS [J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4225 - 4240

[13] LOW-ENERGY-ELECTRON-DIFFRACTION ANALYSIS OF ATOMIC GEOMETRY OF ZNO(1010) [J]. PHYSICAL REVIEW B, 1977, 15 (10): : 4865 - 4873

[14] ANALYSIS OF ELEED INTENSITIES FROM ZNTE(110) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 647 - 650

[15] ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES [J]. CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1978, 8 (01): : 69 - 91

[16] SURFACE-STRUCTURES OF COMPOUND SEMICONDUCTORS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 870 - 877

[17] EASTMAN DE, 1980, J VAC SCI TECHNOL, V17, P492, DOI 10.1116/1.570492

[18] LOW-ENERGY ELECTRON-DIFFRACTION FROM SI(111)-2 X 1 - THEORY AND EXPERIMENT [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (05): : L179 - L184

[19] ELECTRON-PAIR REPULSIONS AND MOLECULAR SHAPE [J]. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 1967, 6 (10) : 819 - &

[20] THEORETICAL STUDIES OF SI AND GAAS SURFACES AND INITIAL STEPS IN OXIDATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1274 - 1286