AN IMPROVED MODEL OF ION-IMPLANTED GAAS OPFET

被引：24

作者：

CHAKRABARTI, P

SHRESTHA, NL

SRIVASTAVA, S

KHEMKA, V

机构：

[1] Department of Electronics and Communication Engineering, Birla Institute of Technology, Ranchi

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 09期

关键词：

D O I：

10.1109/16.155877

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper presentes a seminumerical model of an ion-implanted GaAs OPtical-Field-Effect-Transistor (OPFET). The objective of the present work is to overcome the limitations of the existing model [1] without changing the basic approach. Analytical expressions obtained using one-dimensional Poisson's equation have been solved numerically to obtain the I-V characteristics of the device in dark and illuminated conditions. It is seen that the saturation drain current of the device changes significantly in the illuminated condition. The existing model of the device [1] has been improved in the present analysis by considering the effects of photovoltage generated across the metal-semiconductor junction and optical modulation of depletion edge depths in the illuminated condition. Unlike in the previous model [1] it has been concluded that for a high gate bias resistance the optical radiation controls the saturation drain current by changing the channel conductance rather than its conductivity.

引用

页码：2050 / 2059

页数：10

共 12 条

[1]

BAACK C, 1978, ELECTRON LETT, V13, P193

[2] EFFECT OF RADIATION AND SURFACE RECOMBINATION ON THE CHARACTERISTICS OF AN ION-IMPLANTED GAAS-MESFET [J].