A SI-BIPOLAR TECHNOLOGY FOR OPTICAL FIBER TRANSMISSION RATES ABOVE 10 GB/S

被引：2

作者：

ALBERS, JN

SCHREIBER, HU

机构：

[1] Ruhr-Universitat Bochum, Mikroelektronik-Zentrum (A)

来源：

IEEE JOURNAL ON SELECTED AREAS IN COMMUNICATIONS | 1991年 / 9卷 / 05期

关键词：

D O I：

10.1109/49.87632

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a new high-performance 2-mu-m lithography bipolar process suitable for applications in future (above) 10 Gb/s transmission systems. Employing this simple but optimized technology, a 12 Gb/s multiplexer was implemented. Circuit simulations predict the increase of the bit rate up to at least 15 Gb/s by changing to the 1.5-mu-m lithography. Superior operating speeds will be achieved with the Si/SiGe heterojunction bipolar transistor currently in development at the University of Bochum.

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收藏

页码：652 / 655

页数：4

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