ELECTRICAL MEASUREMENT OF FEATURE SIZES IN MOS SI2-GATE VLSI TECHNOLOGY

被引：18

作者：

TAKACS, D

MULLER, W

SCHWABE, U

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 08期

关键词：

D O I：

10.1109/T-ED.1980.20041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1368 / 1373

页数：6

共 8 条

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