INTERFACE ROUGHNESS FROM GAMMA AND CHI LUMINESCENCE IN TYPE-II GAAS/ALAS SUPERLATTICES WITH COMPOSITION GRADIENT

被引：8

作者：

MAAREF, M

CHARFI, FF

SCALBERT, D

LAGUILLAUME, CBA

PLANEL, R

LEROUX, G

机构：

[1] UNIV PARIS 07,PHYS SOLIDES GRP,F-75251 PARIS 05,FRANCE

[2] PARIS 06,F-75251 PARIS 05,FRANCE

[3] CNRS,CNET,SCI GRP,F-92260 BAGNEUX,FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1992年 / 84卷 / 05期

关键词：

D O I：

10.1016/0038-1098(92)90180-H

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

GaAs/AlAs superlattice of type II with composition gradient were studied by photoluminescence along lines where the width of GaAs and AlAs layers were measured by X ray double diffraction. Splitting of GAMMA and X exciton lines are observed only at particular positions on the sample. The results are discussed in the frame of generally admitted state of interfaces obtained in molecular beam epitaxy.

引用

收藏

页码：511 / 515

页数：5

相关论文

共 12 条

[1] SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION [J].

BASTARD, G .

PHYSICAL REVIEW B, 1981, 24 (10) :5693-5697

[2] OBSERVATION OF ONE MONOLAYER SIZE FLUCTUATIONS IN A GAAS/GAALAS SUPERLATTICE [J].

DEVEAUD, B ;

EMERY, JY ;

CHOMETTE, A ;

LAMBERT, B ;

BAUDET, M .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1078-1080

[3] EXPERIMENTAL-STUDY OF THE GAMMA-X ELECTRON-TRANSFER IN TYPE-II (AL,GA)AS/ALAS SUPERLATTICES AND MULTIPLE-QUANTUM-WELL STRUCTURES [J].

FELDMANN, J ;

NUNNENKAMP, J ;

PETER, G ;

GOBEL, E ;

KUHL, J ;

PLOOG, K ;

DAWSON, P ;

FOXON, CT .

PHYSICAL REVIEW B, 1990, 42 (09) :5809-5821

[4] LINEWIDTH DEPENDENCE OF RADIATIVE EXCITON LIFETIMES IN QUANTUM-WELLS [J].

FELDMANN, J ;

PETER, G ;

GOBEL, EO ;

DAWSON, P ;

MOORE, K ;

FOXON, C ;

ELLIOTT, RJ .

PHYSICAL REVIEW LETTERS, 1987, 59 (20) :2337-2340

[5] EXCITONS, PHONONS, AND INTERFACES IN GAAS/ALAS QUANTUM-WELL STRUCTURES [J].

GAMMON, D ;

SHANABROOK, BV ;

KATZER, DS .

PHYSICAL REVIEW LETTERS, 1991, 67 (12) :1547-1550

[6] INTERFACES IN GAAS ALAS QUANTUM-WELL STRUCTURES [J].

GAMMON, D ;

SHANABROOK, BV ;

KATZER, DS .

APPLIED PHYSICS LETTERS, 1990, 57 (25) :2710-2712

[7] ATOMIC-SCALE ROUGHNESS OF GAAS/ALAS INTERFACES - A RAMAN-SCATTERING STUDY OF ASYMMETRICAL SHORT-PERIOD SUPERLATTICES [J].

JUSSERAND, B ;

MOLLOT, F ;

MOISON, JM ;

LEROUX, G .

APPLIED PHYSICS LETTERS, 1990, 57 (06) :560-562

[8] RECOMBINATION PROCESSES IN SHORT-PERIOD GAAS-ALAS SUPERLATTICES OF TYPE-II [J].

MAAREF, M ;

CHARFI, FF ;

SCALBERT, D ;

LAGUILLAUME, CB ;

PLANEL, R .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1992, 170 (02) :637-651

[9] CHEMICAL MAPPING OF SEMICONDUCTOR INTERFACES AT NEAR-ATOMIC RESOLUTION [J].

OURMAZD, A ;

TAYLOR, DW ;

CUNNINGHAM, J .

PHYSICAL REVIEW LETTERS, 1989, 62 (08) :933-936

[10] THE INFLUENCE OF INTERFACE DISORDER ON THE ELECTRONIC-STRUCTURE OF A QUANTUM-WELL - A THEORETICAL-STUDY [J].

PAQUET, D .

SUPERLATTICES AND MICROSTRUCTURES, 1986, 2 (05) :429-434