Tunneling measurements of the energy gap in CeRhSb and CeNiSn

被引：12

作者：

Ekino, T. ^{[1
]}

Takabatake, T. ^{[1
]}

Tanaka, H. ^{[1
]}

Fujii, H. ^{[1
]}

机构：

[1] Hiroshima Univ, Fac Integrated Arts & Sci, Higashihiroshima 724, Japan

来源：

PHYSICA B-CONDENSED MATTER | 1995年 / 206卷

关键词：

D O I：

10.1016/0921-4526(94)00601-Q

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on the first tunneling measurements of the Kondo semiconductors CeRhSb and CeNiSn. The observed gap values at 4.2 K for CeRhSb and CeNiSn are 24-27 and 10 meV, respectively, which are much larger than the transport gaps. The broadened gap structure strongly suggests an anisotropic gap. The temperature dependence of the tunneling data shows the structures at 8-11 and 23-25 K for CeRhSb and 6 K for CeNiSn. These values are in agreement with the resistivity and susceptibility data for these compounds.

引用

页码：837 / 839

页数：3

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