Gap formation in single-crystal CeRhSb

被引：26

作者：

Takabatake, T. ^{[1
]}

Yoshino, T. ^{[1
]}

Tanaka, H. ^{[1
]}

Bando, Y. ^{[1
]}

Fujii, H. ^{[1
]}

Fujita, T. ^{[2
]}

Shida, H. ^{[3
]}

Suzuki, T. ^{[3
]}

机构：

[1] Hiroshima Univ, Fac Integrated Arts & Sci, Higashihiroshima 724, Japan

[2] Hiroshima Univ, Fac Sci, Higashihiroshima 724, Japan

[3] Tohoku Univ, Fac Sci, Dept Phys, Sendai, Miyagi 980, Japan

来源：

PHYSICA B-CONDENSED MATTER | 1995年 / 206卷

关键词：

D O I：

10.1016/0921-4526(94)00590-R

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The results of measurements of magnetic susceptibility chi, electrical resistivity rho and thermopower S on CeRhSb single crystals are reported. Gap formation in a renormalized band manifests itself in a strong decrease in both chi(T) and S(T) below 20 K. The larger increase in rho(T) found for the less pure crystal suggests that impurities cause strong localization of residual carriers in the pseudogap. The anisotropy in chi(T) and rho(T) at low temperatures closely resembles those in the isostructural Kondo semiconductor CeNiSn.

引用

页码：804 / 806

页数：3

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