REDUCED OXIDE CHARGE TRAPPING AND IMPROVED HOT-ELECTRON RELIABILITY IN SUBMICROMETER MOS DEVICES FABRICATED BY TITANIUM SALICIDE PROCESS

被引：5

作者：

CHANG, ST

CHIU, KY

机构：

[1] Hewlett-Packard Lab, Palo Alto, CA,, USA, Hewlett-Packard Lab, Palo Alto, CA, USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 05期

关键词：

MASS SPECTROMETERS - Applications - SEMICONDUCTOR DEVICES; MOSFET; -; Reliability;

D O I：

10.1109/55.704

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of the titanium salicide (self-aligned silicide) process on the reliability of very-thin-gate-oxide MOSFETs have been studied. It is shown that the titanium salicide process, as compared to the conventional poly-Si gate process, has reduced electron and and hole trapping in the oxide and improved hot-electron reliability. It is shown that these phenomena are related to the reduced hydrogen content in the oxide as revealed by a secondary ion mass spectrometry (SIMS) analysis.

引用

页码：244 / 246

页数：3

共 10 条

[1]

ABBAS SA, 1975, IEDM TECH DIG, P35

[2]

CHANG ST, IN PRESS EFFECTS TIT

[3] THRESHOLD-VOLTAGE INSTABILITY IN MOSFETS DUE TO CHANNEL HOT-HOLE EMISSION [J].