MINORITY CARRIER LIFETIME IN GAP ELECTROLUMINESCENT DIODES

被引：21

作者：

MAEDA, K

KASAMI, A

TOYAMA, M

WAKAMATSU, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1969年 / 8卷 / 01期

关键词：

D O I：

10.1143/JJAP.8.65

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：65 / +

页数：1

共 20 条

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PHYSICAL REVIEW LETTERS, 1966, 17 (25) :1262-&

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[16]

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[17] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

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PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

[18] OPTICAL ABSORPTION IN N-TYPE GALLIUM PHOSPHIDE [J].

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[19]

TOYAMA M, TO BE PUBLISHED

[20]

WILLARDSON RK, 1966, SEMICONDUCTORS SE ED, V2, P289

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