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ELECTRICAL-CONDUCTION IN THE SI(111)-B-(SQUARE-ROOT-3 X SQUARE-ROOT-3)R 30-DEGREES/ALPHA-SI INTERFACE RECONSTRUCTION

被引：20
作者：
HEADRICK, RL
LEVI, AFJ
LUFTMAN, HS
KOVALCHICK, J
FELDMAN, LC
机构：
来源：
PHYSICAL REVIEW B | 1991年 / 43卷 / 18期
关键词：
D O I：
10.1103/PhysRevB.43.14711
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
One-third of a monolayer of spatially ordered boron on (111)-oriented crystalline silicon is prepared in ultrahigh vacuum and then buried under a thin layer of amorphous silicon. This leaves a two-dimensional (square-root 3 x square-root 3) boron layer in substitutional sites confined to a single monolayer on the crystalline side of the interface. We report electrical conductivity with a high p-type carrier density (> 10(14)/cm2) in an ordered two-dimensional interface layer.
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收藏
页码：14711 / 14714
页数：4
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