A PROPOSED MODEL TO EXPLAIN IMPURITY-INDUCED LAYER DISORDERING IN ALAS-GAAS HETEROSTRUCTURES

被引：7

作者：

TATTI, SR

MITRA, S

STARK, JP

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.342777

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2547 / 2549

页数：3

共 24 条

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[6] PHOTOLUMINESCENCE AND STIMULATED-EMISSION IN SI-DISORDERED AND GE-DISORDERED ALX GA1-X AS-GAAS SUPERLATTICES [J].

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APPLIED PHYSICS LETTERS, 1985, 46 (09) :849-850

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[10] SIMS STUDY OF SI-BE CO-DOPING EFFECTS FOR SUPPRESSION OF COMPOSITIONAL DISORDERING IN ALGAAS-GAAS SUPERLATTICES [J].

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