PHOTOCONDUCTION IN GERMANIUM AND SILICON

被引：25

作者：

SCHULTZ, ML

MORTON, GA

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1955年 / 43卷 / 12期

关键词：

D O I：

10.1109/JRPROC.1955.278044

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1819 / 1828

页数：10

共 60 条

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HORNBECK, JA ;

HAYNES, JR .

PHYSICAL REVIEW, 1955, 97 (02) :311-321

[32] INFRARED ABSORPTION, PHOTOCONDUCTIVITY, AND IMPURITY STATES IN GERMANIUM [J].

KAISER, W ;

FAN, HY .

PHYSICAL REVIEW, 1954, 93 (05) :977-980

[33] THEORY OF DONOR AND ACCEPTOR STATES IN SILICON AND GERMANIUM [J].

KITTEL, C ;

MITCHELL, AH .

PHYSICAL REVIEW, 1954, 96 (06) :1488-1493

[34] THEORY OF DONOR STATES IN SILICON [J].

KOHN, W ;

LUTTINGER, JM .

PHYSICAL REVIEW, 1955, 98 (04) :915-922

[35] GROUND STATE OF IMPURITY ATOMS IN SEMICONDUCTORS HAVING ANISOTROPIC ENERGY SURFACES [J].

LAMPERT, MA .

PHYSICAL REVIEW, 1955, 97 (02) :352-353

[36] INFRARED ABSORPTION OF SILICON NEAR THE LATTICE EDGE [J].

MACFARLANE, GG ;

ROBERTS, V .

PHYSICAL REVIEW, 1955, 98 (06) :1865-1866

[37] INFRARED ABSORPTION OF GERMANIUM NEAR THE LATTICE EDGE [J].

MACFARLANE, GG ;

ROBERTS, V .

PHYSICAL REVIEW, 1955, 97 (06) :1714-1716

[38] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].

MORIN, FJ ;

MAITA, JP .

PHYSICAL REVIEW, 1954, 96 (01) :28-35

[39] CONDUCTIVITY AND HALL EFFECT IN THE INTRINSIC RANGE OF GERMANIUM [J].

MORIN, FJ ;

MAITA, JP .

PHYSICAL REVIEW, 1954, 94 (06) :1525-1529

[40]

MORIN FJ, 1953, PHYS REV, V90, P337

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