TUNGSTEN METALLIZATION FOR LSI APPLICATIONS

被引：78

作者：

WAGNER, RS ^{[1
]}

SINHA, AK ^{[1
]}

SHENG, TT ^{[1
]}

LEVINSTEIN, HJ ^{[1
]}

ALEXANDER, FB ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1974年 / 11卷 / 03期

关键词：

D O I：

10.1116/1.1318073

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：582 / 590

页数：9

共 19 条

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[9] ELECTRONS IN TRANSITION METALS [J].

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[10] MICROSTRUCTURE, GROWTH, RESISTIVITY, AND STRESSES IN THIN TUNGSTEN FILMS DEPOSITED BY RF SPUTTERING [J].

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ALEXANDER, FB .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) :2545-2554

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