SPECTROSCOPIC ELLIPSOMETRY AND TRANSMISSION ELECTRON-MICROSCOPY STUDY OF ANNEALED HIGH-DOSE OXYGEN IMPLANTED SILICON

被引：35

作者：

VANHELLEMONT, J ^{[1
]}

MAES, HE ^{[1
]}

DEVEIRMAN, A ^{[1
]}

机构：

[1] ANTWERP STATE UNIV CTR,B-2020 ANTWERP,BELGIUM

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 11期

关键词：

D O I：

10.1063/1.343295

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4454 / 4456

页数：3

共 9 条

[1] ANALYSIS OF BURIED LAYERS FROM HIGH-DOSE OXYGEN ION-IMPLANTATION [J].

BUNKER, SN ;

SIOSHANSI, P ;

SANFACON, M ;

MOGROCAMPERO, A ;

SMITH, GA .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) :148-150

[2]

De Veirman A., 1989, Materials Science Forum, V38-41, P207, DOI 10.4028/www.scientific.net/MSF.38-41.207

[3]

DEVEIRMAN A, 1987, I PHYS C SER, V87, P403

[4] CHARACTERIZATION OF THE SILICON-ON-INSULATOR MATERIAL FORMED BY HIGH-DOSE OXYGEN IMPLANTATION USING SPECTROSCOPIC ELLIPSOMETRY [J].

FERRIEU, F ;

VU, DP ;

DANTERROCHES, C ;

OBERLIN, JC ;

MAILLET, S ;

GROB, JJ .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) :3458-3461

[5] THICKNESS DETERMINATION FOR SILICON-ON-INSULATOR STRUCTURES [J].

KAMINS, TI ;

COLINGE, JP .

ELECTRONICS LETTERS, 1986, 22 (23) :1236-1237

[6] DEPTH PROFILES OF THE OPTICAL-PROPERTIES OF BURIED OXIDES (SIMOX) BY ELLIPSOMETRY [J].

LEVY, M ;

SCHEID, E ;

CRISTOLOVEANU, S .

THIN SOLID FILMS, 1987, 148 (02) :127-134

[7] ELLIPSOMETRIC SPECTRA OF SILICON-ON-INSULATOR WAFERS [J].

LIANG, ZN ;

MO, D .

APPLIED PHYSICS LETTERS, 1988, 52 (13) :1050-1052

[8] SPECTROSCOPIC ELLIPSOMETRY - A NEW TOOL FOR NONDESTRUCTIVE DEPTH PROFILING AND CHARACTERIZATION OF INTERFACES [J].

MCMARR, PJ ;

VEDAM, K ;

NARAYAN, J .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) :694-701

[9] FORMATION AND NONDESTRUCTIVE CHARACTERIZATION OF ION-IMPLANTED SILICON-ON-INSULATOR LAYERS [J].

NARAYAN, J ;

KIM, SY ;

VEDAM, K ;

MANUKONDA, R .

APPLIED PHYSICS LETTERS, 1987, 51 (05) :343-345

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