CHARACTERIZATION OF THE SILICON-ON-INSULATOR MATERIAL FORMED BY HIGH-DOSE OXYGEN IMPLANTATION USING SPECTROSCOPIC ELLIPSOMETRY

被引：20

作者：

FERRIEU, F ^{[1
]}

VU, DP ^{[1
]}

DANTERROCHES, C ^{[1
]}

OBERLIN, JC ^{[1
]}

MAILLET, S ^{[1
]}

GROB, JJ ^{[1
]}

机构：

[1] CTR RECH NUCL,PHASE GRP,F-67037 STRASBOURG,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 08期

关键词：

D O I：

10.1063/1.339317

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3458 / 3461

页数：4

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