FORMATION AND NONDESTRUCTIVE CHARACTERIZATION OF ION-IMPLANTED SILICON-ON-INSULATOR LAYERS

被引：34

作者：

NARAYAN, J

KIM, SY

VEDAM, K

MANUKONDA, R

机构：

[1] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802

[2] HONEYWELL INC,DIV SOLID STATE ELECTR,PLYMOUTH,MN 55441

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 05期

关键词：

D O I：

10.1063/1.98435

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：343 / 345

页数：3

共 16 条

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[3] DENSITY OF AMORPHOUS-GERMANIUM FILMS BY SPECTROSCOPIC ELLIPSOMETRY
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[J]. APPLIED PHYSICS LETTERS, 1986, 48 (08) : 532 - 534
[5] AN ELLIPSOMETRY STUDY OF A HYDROGENATED AMORPHOUS-SILICON BASED N-I STRUCTURE
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CLARK, AH
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HUANG, CY
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) : 4566 - 4571
[6] STRUCTURAL STUDIES OF HYDROGEN-BOMBARDED SILICON USING ELLIPSOMETRY AND TRANSMISSION ELECTRON-MICROSCOPY
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (02): : 153 - 158
[7] INFLUENCE OF SUBSTRATE-TEMPERATURE ON THE FORMATION OF BURIED OXIDE AND SURFACE CRYSTALLINITY DURING HIGH-DOSE OXYGEN IMPLANTATION INTO SI
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SJOREEN, TP
FATHY, D
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[J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1081 - 1083
[8] OPTIMIZED CONDITIONS FOR THE FORMATION OF BURIED INSULATING LAYERS IN SI BY HIGH-DOSE IMPLANTATION OF OXYGEN
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FATHY, D
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SJOREEN, TP
WILSON, SR
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 71 (1-3) : 163 - 170
[9] PROPER CHOICE OF THE ERROR FUNCTION IN MODELING SPECTROELLIPSOMETRIC DATA
KIM, SY
VEDAM, K
[J]. APPLIED OPTICS, 1986, 25 (12): : 2013 - 2021
[10] SILICON-ON-INSULATOR BY OXYGEN ION-IMPLANTATION
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PINIZZOTTO, RF
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 63 (03) : 554 - 558

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