OPTIMIZED CONDITIONS FOR THE FORMATION OF BURIED INSULATING LAYERS IN SI BY HIGH-DOSE IMPLANTATION OF OXYGEN

被引：8

作者：

HOLLAND, OW ^{[1
]}

FATHY, D ^{[1
]}

NARAYAN, J ^{[1
]}

SJOREEN, TP ^{[1
]}

WILSON, SR ^{[1
]}

机构：

[1] MOTOROLA INC,SEMICOND PROD SECTOR,SEMICOND RES & DEV LABS,PHOENIX,AZ 85008

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 71卷 / 1-3期

关键词：

* Research sponsored by the Division of Materials Sciences; US Department of Energy under contract DE-AC05-84OR21400 with Martin Marietta Energy Systems Inc. and by a grant from the Department of Materials Engineering; NCSU; DOE subcontract 19X-43377C. t Guest scientist from North Carolina State University; Raleigh; NC; USA;

D O I：

10.1016/0022-3093(85)90285-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：163 / 170

页数：8

共 12 条

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[5] AN INVESTIGATION OF THE PROPERTIES OF AN EPITAXIAL SI LAYER ON A SUBSTRATE WITH A BURIED SIO2 LAYER FORMED BY OXYGEN-ION IMPLANTATION
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[9] DYNAMIC OBSERVATION OF FORMATION OF DEFECTS IN SILICON UNDER ELECTRON AND PROTON IRRADIATION
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[10] ENHANCED DIFFUSION IN SI AND GE BY LIGHT ION IMPLANTATION
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