AMORPHOUS VISIBLE-LIGHT THIN-FILM LIGHT-EMITTING DIODE HAVING A-SIN-H AS A LUMINESCENT LAYER

被引：28

作者：

BOONKOSUM, W

KRUANGAM, D

PANYAKEOW, S

机构：

[1] Semiconductor Device Research Laboratory, Department of Electrical Engineering Chulalongkorn University, Bangkok

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 04期

关键词：

HYDROGENATED AMORPHOUS SILICON NITRIDE; HYDROGENATED AMORPHOUS SILICON CARBIDE; THIN FILM LED; INJECTION ELECTROLUMINESCENCE; PHOTOLUMINESCENCE; LED;

D O I：

10.1143/JJAP.32.1534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogenated amorphous silicon nitride (a-SiN:H) has been applied for the first time as a luminescent active layer (i-layer) in an amorphous visible-light thin film light-emitting diode (TFLED). The TFLED has the structure of glass substrate/ITO/p a-SiC:H/i a-SiN:H/n a-SiC:H/Al. Visible red and yellow emissions can be observed at room temperature from the TFLEDs in which the optical energy gap of i-a-SiN:H is larger than 2.4 eV. The brightness of the red TFLED was 0.5 cd/m2, with a forward injection current density of 2000 mA/cm2 for the 0.033 cm2 cell area.

引用

页码：1534 / 1538

页数：5

共 16 条

[11] MORIMOTO A, 1985, JPN J APPL PHYS, V24, pL394
[12] INVESTIGATIONS OF N-H AND SI-N BONDING CONFIGURATIONS IN HYDROGENATED AMORPHOUS-SILICON NITRIDE FILMS BY INFRARED-ABSORPTION SPECTROSCOPY
NARIKAWA, S
KOJIMA, Y
EHARA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (11): : L861 - L863
[13] A MODEL DESCRIBING THE ELECTRICAL BEHAVIOR OF A-SIN-H ALLOYS
OSENBACH, JW
KNOLLE, WR
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) : 1408 - 1416
[14] GAP STATES IN SILICON-NITRIDE
ROBERTSON, J
POWELL, MJ
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (04) : 415 - 417
[15] SPEAR WE, 1987, MATER RES SOC S P, V95, P39
[16] [No title captured]

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