COMPARISON OF GAN-BASED AND ZNSE-BASED MATERIALS FOR LIGHT EMITTERS

Recent progress in research on GaN- and ZnSe-related materials is remarkable. Based on these results, this paper compares the characteristics of GaN- and ZnSe-based materials from the viewpoint of achieving reliable light emitting devices, in particular laser diodes (LDs) based on experience gained in the development of LDs such as the InGaAsP/InP and GaAs/AlGaAs LDs widely used at present. The relationship between lattice constant and bandgap energy, the dispersion of refractive indices, the equilibrium vapor pressure of elements over materials, and self-diffusion coefficients can be compared. The current status of both materials is reviewed with respect to light emitters. The transport devices are also described, briefly. Finally, future prospects are discussed.