GAAS TO INP WAFER FUSION

被引：68

作者：

RAM, RJ ^{[1
]}

DUDLEY, JJ ^{[1
]}

BOWERS, JE ^{[1
]}

YANG, L ^{[1
]}

CAREY, K ^{[1
]}

ROSNER, SJ ^{[1
]}

NAUKA, K ^{[1
]}

机构：

[1] HEWLETT PACKARD LABS,PALO ALTO,CA 94303

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 06期

关键词：

D O I：

10.1063/1.359884

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper presents an analysis of the various properties of the fused interface between GaAs and InP. Interface dislocations are characterized by transmission electron microscopy. Bipolar electrical properties are studied by electron beam induced current measurements and by electrical measurements of fused diode and laser structures. Absorptive optical losses at the interface are estimated from measurements on fused Fabry-Perot resonators and optical scattering losses from interface roughness are estimated by atomic force microscopy. Finally a preliminary mechanical analysis of fracture patterns of fused mesas is presented. The results from our analysis are used to develop guidelines for the fabrication of fused optoelectronic devices. (C) 1995 American Institute of Physics.

引用

页码：4227 / 4237

页数：11

共 49 条

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