GAAS TO INP WAFER FUSION

被引：68

作者：

RAM, RJ ^{[1
]}

DUDLEY, JJ ^{[1
]}

BOWERS, JE ^{[1
]}

YANG, L ^{[1
]}

CAREY, K ^{[1
]}

ROSNER, SJ ^{[1
]}

NAUKA, K ^{[1
]}

机构：

[1] HEWLETT PACKARD LABS,PALO ALTO,CA 94303

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 06期

关键词：

D O I：

10.1063/1.359884

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper presents an analysis of the various properties of the fused interface between GaAs and InP. Interface dislocations are characterized by transmission electron microscopy. Bipolar electrical properties are studied by electron beam induced current measurements and by electrical measurements of fused diode and laser structures. Absorptive optical losses at the interface are estimated from measurements on fused Fabry-Perot resonators and optical scattering losses from interface roughness are estimated by atomic force microscopy. Finally a preliminary mechanical analysis of fracture patterns of fused mesas is presented. The results from our analysis are used to develop guidelines for the fabrication of fused optoelectronic devices. (C) 1995 American Institute of Physics.

引用

页码：4227 / 4237

页数：11

共 49 条

[11] FEIDLER F, 1982, J MATER SCI, V17, P2911
[12] THE IDENTIFICATION OF DARK-LINE DEFECTS IN ALGAAS/INGAAS/GAAS HETEROSTRUCTURES
FITZGERALD, EA
ASHIZAWA, Y
EASTMAN, LF
AST, DG
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (10) : 4925 - 4928
[13] DISLOCATION-STRUCTURE, FORMATION, AND MINORITY-CARRIER RECOMBINATION IN ALGAAS/INGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
FITZGERALD, EA
AST, DG
ASHIZAWA, Y
AKBAR, S
EASTMAN, LF
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (05) : 2473 - 2487
[14] BAND-OFFSET TRANSITIVITY IN STRAINED (001) HETEROINTERFACES
FOULON, Y
PRIESTER, C
[J]. PHYSICAL REVIEW B, 1992, 45 (11): : 6259 - 6262
[15] DISLOCATION MECHANISMS OF RELAXATION IN STRAINED EPITAXIAL-FILMS
FREUND, LB
[J]. MRS BULLETIN, 1992, 17 (07) : 52 - 60
[16] APPLICATIONS OF THE SILICON-WAFER DIRECT-BONDING TECHNIQUE TO ELECTRON DEVICES
FURUKAWA, K
NAKAGAWA, A
[J]. APPLIED SURFACE SCIENCE, 1989, 41-2 : 627 - 632
[17] GOEL AK, 1990, 32ND P MIDW S CIRC S, V2, P1269
[18] DIFFUSION-BONDED STACKED GAAS FOR QUASI-PHASE-MATCHED 2ND-HARMONIC GENERATION OF A CARBON-DIOXIDE LASER
GORDON, L
WOODS, GL
ECKARDT, RC
ROUTE, RR
FEIGELSON, RS
FEJER, MM
BYER, RL
[J]. ELECTRONICS LETTERS, 1993, 29 (22) : 1942 - 1944
[19] A THEORETICAL-MODEL OF INP MASS-TRANSPORT
HANSEN, K
PEINER, E
TANG, GP
SCHLACHETZKI, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (1A): : 234 - 238
[20] IMPROVEMENT IN DARK CURRENT CHARACTERISTICS AND LONG-TERM STABILITY OF MESA INGAAS/INP P-I-N PHOTODIODES WITH 2-STEP SINX SURFACE PASSIVATION
HUANG, RT
RENNER, D
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (10) : 934 - 936

← 1 2 3 4 5 →