INTERPLAY BETWEEN EVOLVING SURFACE-MORPHOLOGY, ATOMIC-SCALE GROWTH MODES, AND ORDERING DURING SIXGE1-X EPITAXY

被引：39

作者：

JESSON, DE ^{[1
]}

PENNYCOOK, SJ ^{[1
]}

TISCHLER, JZ ^{[1
]}

BUDAI, JD ^{[1
]}

BARIBEAU, JM ^{[1
]}

HOUGHTON, DC ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 70卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.70.2293

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Atomic-scale compositional ordering in SixGe1-x alloys is directly linked to the formation of coherent islands during Stranski-Krastanow growth. The vicinal surfaces associated with nonequilibrium island shapes induce a bilayer step flow growth mode, and the ordering results from Ge segregation at D(B) kinks.

引用

页码：2293 / 2296

页数：4

共 21 条

[1] [Anonymous], 1938, ABHANDLUNGEN AK B MN
[2] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES
BURTON, WK
CABRERA, N
FRANK, FC
[J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) : 299 - 358
[3] 2XN SURFACE-STRUCTURE OF SIGE LAYERS DEPOSITED ON SI(100)
BUTZ, R
KAMPERS, S
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (11) : 1307 - 1309
[4] STABILITIES OF SINGLE-LAYER AND BILAYER STEPS ON SI(001) SURFACES
CHADI, DJ
[J]. PHYSICAL REVIEW LETTERS, 1987, 59 (15) : 1691 - 1694
[5] SURFACTANTS IN EPITAXIAL-GROWTH
COPEL, M
REUTER, MC
KAXIRAS, E
TROMP, RM
[J]. PHYSICAL REVIEW LETTERS, 1989, 63 (06) : 632 - 635
[6] DYNAMICAL CALCULATION OF THERMAL DIFFUSE ELECTRON SCATTERING
DOYLE, PA
[J]. ACTA CRYSTALLOGRAPHICA SECTION A-CRYSTAL PHYSICS DIFFRACTION THEORETICAL AND GENERAL CRYSTALLOGRAPHY, 1969, A 25 : 569 - &
[7] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100)
EAGLESHAM, DJ
CERULLO, M
[J]. PHYSICAL REVIEW LETTERS, 1990, 64 (16) : 1943 - 1946
[8] LIMITING THICKNESS HEPI FOR EPITAXIAL-GROWTH AND ROOM-TEMPERATURE SI GROWTH ON SI(100)
EAGLESHAM, DJ
GOSSMANN, HJ
CERULLO, M
[J]. PHYSICAL REVIEW LETTERS, 1990, 65 (10) : 1227 - 1230
[9] ONE-DIMENSIONAL DISLOCATIONS .1. STATIC THEORY
FRANK, FC
VANDERMERWE, JH
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053): : 205 - 216
[10] EPITAXIAL-GROWTH OF SILICON ON SI(001) BY SCANNING TUNNELING MICROSCOPY
HAMERS, RJ
KOHLER, UK
DEMUTH, JE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (01): : 195 - 200

← 1 2 3 →