PD/ZN/PD/AU OHMIC CONTACTS TO P-TYPE INP

被引：29

作者：

IVEY, DG ^{[1
]}

JIAN, P ^{[1
]}

WAN, L ^{[1
]}

BRUCE, R ^{[1
]}

EICHER, S ^{[1
]}

BLAAUW, C ^{[1
]}

机构：

[1] BELL NO RES,OTTAWA K17 4H7,ONTARIO,CANADA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1991年 / 20卷 / 03期

关键词：

OHMIC CONTACTS; INP; TRANSMISSION ELECTRON MICROSCOPY;

D O I：

10.1007/BF02651899

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low resistance ohmic contacts (rho-c = 7 x 10-5 OMEGA-cm2) have been fabricated to Zn-doped p-type InP using an annealed Pd/Zn/Pd/Au metallization. Palladium reacts with InP at low temperatures to form a Pd2InP ternary phase, which is initially amorphous but crystallizes and grows epitaxially on InP. Zinc reacts with some of the overlying Pd to form PdZn (approximately-equal-to 250-degrees-C), which decomposes at 400-425-degrees-C to form PdP2, freeing up Zn to diffuse into Au as well as InP. The contact resistance reaches a minimum as the decomposition reaction takes place. The resultant ohmic contact is laterally uniform and consists of epitaxial Pd2InP adjacent to InP, followed by a thin layer of PdP2 and then the outer Au layer. Further annealing leads to a breakdown of the contact structure, i.e. decomposition of Pd2InP, and an increase in contact resistance.

引用

页码：237 / 246

页数：10

共 23 条

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J].