DEFECT ANNIHILATION IN SHALLOW P+ JUNCTIONS USING TITANIUM SILICIDE

被引：88

作者：

WEN, DS

SMITH, PL

OSBURN, CM

ROZGONYI, GA

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

[2] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 15期

关键词：

D O I：

10.1063/1.98726

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1182 / 1184

页数：3

共 11 条

[1] ELIMINATION OF END-OF-RANGE AND MASK EDGE LATERAL DAMAGE IN GE+ PREAMORPHIZED, B+ IMPLANTED SI [J].

AJMERA, AC ;

ROZGONYI, GA .

APPLIED PHYSICS LETTERS, 1986, 49 (19) :1269-1271

[2] SELF-ALIGNED TI SILICIDE FORMED BY RAPID THERMAL ANNEALING [J].

BRAT, T ;

OSBURN, CM ;

FINSTAD, T ;

LIU, J ;

ELLINGTON, B .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (07) :1451-1458

[3]

CALDER ID, 1985, MATERIALS RES SOC S, V35, P353

[4] SHALLOW JUNCTION FORMATION BY PREAMORPHIZATION WITH TIN IMPLANTATION [J].

DELFINO, M ;

SADANA, DK ;

MORGAN, AE .

APPLIED PHYSICS LETTERS, 1986, 49 (10) :575-577

[5]

GANIN E, 1986, FAL MAT RES SOC M MA

[6]

MAEX K, 1986, 5TH P INT S SIL MAT, P346

[7]

OHDOMARI I, 1986, MATER RES SOC S P, V54, P63

[8]

OZTURK MC, 1987, SPR S RAP THERM PROC

[9] GERMANIUM IMPLANTATION INTO SILICON - AN ALTERNATE PRE-AMORPHIZATION RAPID THERMAL ANNEALING PROCEDURE FOR SHALLOW JUNCTION FORMATION [J].

SADANA, DK ;

MASZARA, W ;

WORTMANN, JJ ;

ROZGONYI, GA ;

CHU, WK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (04) :943-945

[10]

SHARMA D, 1987, 1ST P INT S ULTR LAR

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