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SELF-ALIGNED TI SILICIDE FORMED BY RAPID THERMAL ANNEALING

被引：36
作者：
BRAT, T
OSBURN, CM
FINSTAD, T
LIU, J
ELLINGTON, B
机构：
[1] MICROELECTR CTR N CAROLINA, RES TRIANGLE PK, NC 27709 USA
[2] N CAROLINA STATE UNIV, DEPT PHYS, RALEIGH, NC 27695 USA
[3] N CAROLINA STATE UNIV, RALEIGH, NC 27695 USA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 07期
关键词：
D O I：
10.1149/1.2108933
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：1451 / 1458
页数：8
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  • [1] DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS
    ALPERIN, ME
    HOLLAWAY, TC
    HAKEN, RA
    GOSMEYER, CD
    KARNAUGH, RV
    PARMANTIE, WD
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) : 61 - 69
  • [2] ARSENIC OUT-DIFFUSION DURING TISI2 FORMATION
    AMANO, J
    MERCHANT, P
    KOCH, T
    [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 744 - 746
  • [3] SOLID-STATE NUCLEATION IN THE TI-SI ULTRATHIN FILM SYSTEM
    BENE, RW
    YANG, HY
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (01) : 1 - 10
  • [4] GROWTH AND STRUCTURE OF TITANIUM SILICIDE PHASES FORMED BY THIN TI FILMS ON SI CRYSTALS
    BENTINI, GG
    NIPOTI, R
    ARMIGLIATO, A
    BERTI, M
    DRIGO, AV
    COHEN, C
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 270 - 275
  • [5] TITANIUM AND NICKEL SILICIDE FORMATION AFTER Q-SWITCHED LASER AND MULTI-SCANNING ELECTRON-BEAM IRRADIATION
    BENTINI, GG
    SERVIDORI, M
    COHEN, C
    NIPOTI, R
    DRIGO, AV
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1525 - 1531
  • [6] TITANIUM SILICIDE FORMATION - EFFECT OF OXYGEN DISTRIBUTION IN THE METAL-FILM
    BERTI, M
    DRIGO, AV
    COHEN, C
    SIEJKA, J
    BENTINI, GG
    NIPOTI, R
    GUERRI, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3558 - 3565
  • [7] METASTABLE PHASE FORMATION IN TITANIUM-SILICON THIN-FILMS
    BEYERS, R
    SINCLAIR, R
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5240 - 5245
  • [8] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON
    BOWER, RW
    MAYER, JW
    [J]. APPLIED PHYSICS LETTERS, 1972, 20 (09) : 359 - &
  • [9] CHEMICAL AND STRUCTURAL ASPECTS OF REACTION AT THE TI SI INTERFACE
    BUTZ, R
    RUBLOFF, GW
    TAN, TY
    HO, PS
    [J]. PHYSICAL REVIEW B, 1984, 30 (10): : 5421 - 5429
  • [10] CHEMICAL BONDING AND REACTIONS AT TI/SI AND TI/OXYGEN/SI INTERFACES
    BUTZ, R
    RUBLOFF, GW
    HO, PS
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 771 - 775
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