SELF-ALIGNED TI SILICIDE FORMED BY RAPID THERMAL ANNEALING

[61] SHORT-TIME ANNEALING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) : 484 - 493

[62] SHORT-TIME ANNEALING OF COEVAPORATED TUNGSTEN SILICIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) : 2446 - 2451

[63] TEMPERATURE TRANSIENTS IN HEAVILY DOPED AND UNDOPED SILICON USING RAPID THERMAL ANNEALING [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) : 1317 - 1321

[64] Shibata T., 1981, International Electron Devices Meeting, P647

[65] SOFIELD CJ, 1985, MATERIALS RES SOC S, V35, P445

[66] REFRACTORY-METAL SILICIDE FORMATION BY SPUTTERING A REFRACTORY-METAL ON HEATED SI SUBSTRATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 714 - 717

[67] TANIELIAN M, 1985, ELECTROCHEMICAL SOC, V851, P388

[68] INTERACTION BETWEEN TI AND SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) : 2934 - 2938

[69] TING CY, 1985, EXT ABSTR, V851, P387

[70] TING CY, 1984, PV847 EL SOC SOFTB P, P242

[61] SHORT-TIME ANNEALING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) : 484 - 493

[62] SHORT-TIME ANNEALING OF COEVAPORATED TUNGSTEN SILICIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) : 2446 - 2451

[63] TEMPERATURE TRANSIENTS IN HEAVILY DOPED AND UNDOPED SILICON USING RAPID THERMAL ANNEALING [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) : 1317 - 1321

[64] Shibata T., 1981, International Electron Devices Meeting, P647

[65] SOFIELD CJ, 1985, MATERIALS RES SOC S, V35, P445

[66] REFRACTORY-METAL SILICIDE FORMATION BY SPUTTERING A REFRACTORY-METAL ON HEATED SI SUBSTRATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 714 - 717

[67] TANIELIAN M, 1985, ELECTROCHEMICAL SOC, V851, P388

[68] INTERACTION BETWEEN TI AND SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) : 2934 - 2938

[69] TING CY, 1985, EXT ABSTR, V851, P387

[70] TING CY, 1984, PV847 EL SOC SOFTB P, P242