SHORT-TIME ANNEALING OF COEVAPORATED TUNGSTEN SILICIDE FILMS

[1] ARIENZO M, UNPUB J APPL PHYS

[2] EFFECTS OF GRAIN-BOUNDARIES ON THE RESISTIVITY OF CO-SPUTTERED WSI2 FILMS [J]. THIN SOLID FILMS, 1982, 93 (3-4) : 341 - 346

[3] DHEURLE FM, 1982, VLSI SCI TECHNOLOGY, P194

[4] ISHIWARA H, 1981, LASER ELECTRON BEAM, V1, P525

[5] THE BEHAVIOR OF BORON (ALSO ARSENIC) IN BILAYERS OF POLYCRYSTALLINE SILICON AND TUNGSTEN DISILICIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7372 - 7378

[6] PHOSPHORUS OUT DIFFUSION FROM DOUBLE-LAYERED TANTALUM SILICIDE POLYCRYSTALLINE SILICON STRUCTURE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01): : 1 - 5

[7] MCPHERSON J, 1983, JUN EL MAT COMM C BU

[8] MOHAMMADI F, 1981, SOLID STATE TECHNOL, V24, P65

[9] REDISTRIBUTION OF DOPANTS IN TISI2-POLYCRYSTALLINE BILAYERS DURING HEAT-TREATMENT [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 463 - 464

[10] DOPANT DIFFUSION IN TUNGSTEN SILICIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3059 - 3062

[1] ARIENZO M, UNPUB J APPL PHYS

[2] EFFECTS OF GRAIN-BOUNDARIES ON THE RESISTIVITY OF CO-SPUTTERED WSI2 FILMS [J]. THIN SOLID FILMS, 1982, 93 (3-4) : 341 - 346

[3] DHEURLE FM, 1982, VLSI SCI TECHNOLOGY, P194

[4] ISHIWARA H, 1981, LASER ELECTRON BEAM, V1, P525

[5] THE BEHAVIOR OF BORON (ALSO ARSENIC) IN BILAYERS OF POLYCRYSTALLINE SILICON AND TUNGSTEN DISILICIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7372 - 7378

[6] PHOSPHORUS OUT DIFFUSION FROM DOUBLE-LAYERED TANTALUM SILICIDE POLYCRYSTALLINE SILICON STRUCTURE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01): : 1 - 5

[7] MCPHERSON J, 1983, JUN EL MAT COMM C BU

[8] MOHAMMADI F, 1981, SOLID STATE TECHNOL, V24, P65

[9] REDISTRIBUTION OF DOPANTS IN TISI2-POLYCRYSTALLINE BILAYERS DURING HEAT-TREATMENT [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 463 - 464

[10] DOPANT DIFFUSION IN TUNGSTEN SILICIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3059 - 3062