SELF-ALIGNED TI SILICIDE FORMED BY RAPID THERMAL ANNEALING

[51] PARK HK, 1984, J VAC SCI TECHNOL A, V2, P264, DOI 10.1116/1.572576

[52] PINIZZOTTO RF, 1981, PV815 EL SOC SOFTB P, P562

[53] FORMATION OF TITANIUM SILICIDE FILMS BY RAPID THERMAL-PROCESSING [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) : 380 - 382

[54] POWELL RA, 1984, SEMICONDUCTOR IN MAY, P168

[55] INFLUENCE OF THE INTERFACIAL OXIDE ON TITANIUM SILICIDE FORMATION BY RAPID THERMAL ANNEALING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04): : 775 - 780

[56] PRAMANIK D, 1985, SEMICONDUCTOR INT, P93

[57] LATERAL GROWTH OF TITANIUM SILICIDE OVER A SILICON DIOXIDE LAYER [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 2114 - 2115

[58] REVESZ P, 1983, J APPL PHYS, V54, P1860, DOI 10.1063/1.332237

[59] TITANIUM DISILICIDE IN MOS TECHNOLOGY [J]. PHYSICA SCRIPTA, 1982, 26 (02): : 108 - 112

[60] Santiago J. J., 1984, Materials Letters, V2, P477, DOI 10.1016/0167-577X(84)90076-4

[51] PARK HK, 1984, J VAC SCI TECHNOL A, V2, P264, DOI 10.1116/1.572576

[52] PINIZZOTTO RF, 1981, PV815 EL SOC SOFTB P, P562

[53] FORMATION OF TITANIUM SILICIDE FILMS BY RAPID THERMAL-PROCESSING [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) : 380 - 382

[54] POWELL RA, 1984, SEMICONDUCTOR IN MAY, P168

[55] INFLUENCE OF THE INTERFACIAL OXIDE ON TITANIUM SILICIDE FORMATION BY RAPID THERMAL ANNEALING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04): : 775 - 780

[56] PRAMANIK D, 1985, SEMICONDUCTOR INT, P93

[57] LATERAL GROWTH OF TITANIUM SILICIDE OVER A SILICON DIOXIDE LAYER [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 2114 - 2115

[58] REVESZ P, 1983, J APPL PHYS, V54, P1860, DOI 10.1063/1.332237

[59] TITANIUM DISILICIDE IN MOS TECHNOLOGY [J]. PHYSICA SCRIPTA, 1982, 26 (02): : 108 - 112

[60] Santiago J. J., 1984, Materials Letters, V2, P477, DOI 10.1016/0167-577X(84)90076-4