SELF-ALIGNED TI SILICIDE FORMED BY RAPID THERMAL ANNEALING

[11] TRANSMISSION ELECTRON-MICROSCOPY STUDIES ON THE LATERAL GROWTH OF NICKEL SILICIDES [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 258 - 263

[12] TITANIUM SILICIDE FORMATION ON BF2+-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1985, 46 (01) : 41 - 43

[13] REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1480 - 1497

[14] COOPER CB, 1984, MATER RES SOC S P, V23, P739

[15] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[16] INTERACTION OF EVAPORATED PALLADIUM AND TITANIUM FILMS WITH SINGLE-CRYSTAL SILICON [J]. THIN SOLID FILMS, 1980, 68 (02) : 393 - 405

[17] MOSI2 FORMATION BY RAPID ISOTHERMAL ANNEALING [J]. ELECTRON DEVICE LETTERS, 1982, 3 (07): : 179 - 181

[18] HEAT-PULSE ANNEALING OF ARSENIC-IMPLANTED SILICON WITH A CW ARC LAMP [J]. ELECTRON DEVICE LETTERS, 1981, 2 (04): : 85 - 87

[19] APPLICATION OF TITANIUM POLYCIDE INTERCONNECTS IN A SILICON-GATE PROCESS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04): : 730 - 732

[20] FORMATION AND PROPERTIES OF TISI2 FILMS [J]. THIN SOLID FILMS, 1983, 100 (01) : 1 - 7

[11] TRANSMISSION ELECTRON-MICROSCOPY STUDIES ON THE LATERAL GROWTH OF NICKEL SILICIDES [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 258 - 263

[12] TITANIUM SILICIDE FORMATION ON BF2+-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1985, 46 (01) : 41 - 43

[13] REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1480 - 1497

[14] COOPER CB, 1984, MATER RES SOC S P, V23, P739

[15] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[16] INTERACTION OF EVAPORATED PALLADIUM AND TITANIUM FILMS WITH SINGLE-CRYSTAL SILICON [J]. THIN SOLID FILMS, 1980, 68 (02) : 393 - 405

[17] MOSI2 FORMATION BY RAPID ISOTHERMAL ANNEALING [J]. ELECTRON DEVICE LETTERS, 1982, 3 (07): : 179 - 181

[18] HEAT-PULSE ANNEALING OF ARSENIC-IMPLANTED SILICON WITH A CW ARC LAMP [J]. ELECTRON DEVICE LETTERS, 1981, 2 (04): : 85 - 87

[19] APPLICATION OF TITANIUM POLYCIDE INTERCONNECTS IN A SILICON-GATE PROCESS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04): : 730 - 732

[20] FORMATION AND PROPERTIES OF TISI2 FILMS [J]. THIN SOLID FILMS, 1983, 100 (01) : 1 - 7