SELF-ALIGNED TI SILICIDE FORMED BY RAPID THERMAL ANNEALING

[41] TITANIUM DISILICIDE FORMATION BY WIDE-AREA ELECTRON-BEAM IRRADIATION [J]. APPLIED PHYSICS LETTERS, 1984, 45 (02) : 169 - 171

[42] THIN-FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 342 - 349

[43] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1409 - 1417

[44] RESISTIVITIES OF THIN-FILM TRANSITION-METAL SILICIDES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 293 - 301

[45] SILICIDE FORMATION IN THIN CO-SPUTTERED (TITANIUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 350 - 356

[46] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792

[47] INITIAL REACTIONS AND SILICIDE FORMATION OF TITANIUM ON SILICON STUDIED BY RAMAN-SPECTROSCOPY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 938 - 941

[48] TITANIUM SILICIDATION BY HALOGEN LAMP ANNEALING [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5251 - 5256

[49] OSBURN CM, 1982, P 1 INT S VLSI SCI T, P213

[50] MO/TI BILAYER METALLIZATION FOR A SELF-ALIGNED TISI2 PROCESS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 259 - 263

[41] TITANIUM DISILICIDE FORMATION BY WIDE-AREA ELECTRON-BEAM IRRADIATION [J]. APPLIED PHYSICS LETTERS, 1984, 45 (02) : 169 - 171

[42] THIN-FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 342 - 349

[43] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1409 - 1417

[44] RESISTIVITIES OF THIN-FILM TRANSITION-METAL SILICIDES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 293 - 301

[45] SILICIDE FORMATION IN THIN CO-SPUTTERED (TITANIUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 350 - 356

[46] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792

[47] INITIAL REACTIONS AND SILICIDE FORMATION OF TITANIUM ON SILICON STUDIED BY RAMAN-SPECTROSCOPY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 938 - 941

[48] TITANIUM SILICIDATION BY HALOGEN LAMP ANNEALING [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5251 - 5256

[49] OSBURN CM, 1982, P 1 INT S VLSI SCI T, P213

[50] MO/TI BILAYER METALLIZATION FOR A SELF-ALIGNED TISI2 PROCESS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 259 - 263