SOLID-STATE NUCLEATION IN THE TI-SI ULTRATHIN FILM SYSTEM

被引：21

作者：

BENE, RW ^{[1
]}

YANG, HY ^{[1
]}

机构：

[1] UNIV TEXAS,ELECTR RES CTR,AUSTIN,TX 78712

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1983年 / 12卷 / 01期

关键词：

D O I：

10.1007/BF02651631

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1 / 10

页数：10

共 7 条

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BENE, RW ;

WALSER, RM ;

LEE, GS ;

CHEN, KC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :911-915

[2] THE STRUCTURE OF GOLD SILICIDE IN THIN AU-SI FILMS [J].

GAIGHER, HL ;

VANDERBERG, NG .

THIN SOLID FILMS, 1980, 68 (02) :373-379

[3] SILICIDE SURFACE PHASES ON GOLD [J].

GREEN, AK ;

BAUER, E .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5098-5106

[4] SOLID-STATE REACTIONS IN TITANIUM THIN-FILMS ON SILICON [J].

KATO, H ;

NAKAMURA, Y .

THIN SOLID FILMS, 1976, 34 (01) :135-138

[5] BACKSCATTERING ANALYSIS OF THE SUCCESSIVE LAYER STRUCTURES OF TITANIUM SILICIDES [J].

MAA, JS ;

LIN, CJ ;

LIU, JH ;

LIU, YC .

THIN SOLID FILMS, 1979, 64 (03) :439-444

[6] THIN-FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICON [J].

MURARKA, SP ;

FRASER, DB .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :342-349

[7] 1ST PHASE NUCLEATION IN SILICON-TRANSITION-METAL PLANAR INTERFACES [J].

WALSER, RM ;

BENE, RW .

APPLIED PHYSICS LETTERS, 1976, 28 (10) :624-625

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