EPITAXIAL N+ LAYER GAAS MESA-FINGER INTERDIGITAL SURFACE PHOTODETECTORS

被引：10

作者：

DARLING, RB ^{[1
]}

NABET, B ^{[1
]}

SAMARAS, JE ^{[1
]}

RAY, S ^{[1
]}

CARTER, EL ^{[1
]}

机构：

[1] BOEING CO,CTR ELECTR HIGH TECHNOL,SEATTLE,WA 98124

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 10期

关键词：

D O I：

10.1109/55.43100

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：461 / 463

页数：3

相关论文

共 8 条

[1] Auston D, 1984, PICOSECOND OPTOELECT, P73, DOI [10.1016/B978-0-12-440880-7.50008-0, DOI 10.1016/B978-0-12-440880-7.50008-0]
[2] ANALYSIS OF MICROWAVE CHARACTERISTICS OF PHOTOCONDUCTIVE IC STRUCTURES
DARLING, RB
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (03) : 325 - 339
[3] GAAS OPTOELECTRONIC INTEGRATED RECEIVER WITH HIGH-OUTPUT FAST-RESPONSE CHARACTERISTICS
HAMAGUCHI, H
MAKIUCHI, M
KUMAI, T
WADA, O
[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (01) : 39 - 41
[4] LOW DARK CURRENT GAAS METAL-SEMICONDUCTOR METAL (MSM) PHOTODIODES USING WSIX CONTACTS
ITO, M
WADA, O
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (07) : 1073 - 1077
[5] MONOLITHIC INTEGRATION OF A METAL-SEMICONDUCTOR METAL PHOTODIODE AND A GAAS PREAMPLIFIER
ITO, M
WADA, O
NAKAI, K
SAKURAI, T
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) : 531 - 532
[6] A MONOLITHIC 4-CHANNEL PHOTORECEIVER INTEGRATED ON A GAAS SUBSTRATE USING METAL-SEMICONDUCTOR-METAL PHOTODIODES AND FETS
MAKIUCHI, M
HAMAGUCHI, H
KUMAI, T
ITO, M
WADA, O
SAKURAI, T
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 634 - 635
[7] METAL-SEMICONDUCTOR-METAL PHOTODETECTOR FOR HIGH-SPEED OPTOELECTRONIC CIRCUITS
SUGETA, T
URISU, T
SAKATA, S
MIZUSHIMA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 459 - 464
[8] SUGETA T, 1979, 11TH P INT C SOL STA