ANALYSIS OF MICROWAVE CHARACTERISTICS OF PHOTOCONDUCTIVE IC STRUCTURES

[1] ARAMS FR, 1970, SEMICONDUCT SEMIMET, V5, P409

[2] PICOSECOND OPTOELECTRONIC SWITCHING AND GATING IN SILICON [J]. APPLIED PHYSICS LETTERS, 1975, 26 (03) : 101 - 103

[3] GAAS MESFET - HIGH-SPEED OPTICAL DETECTOR [J]. ELECTRONICS LETTERS, 1977, 13 (07) : 193 - 193

[4] ON THE RESPONSE BEHAVIOR OF FAST PHOTOCONDUCTIVE OPTICAL PLANAR AND COAXIAL SEMICONDUCTOR-DETECTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) : 1431 - 1441

[5] GAIN AND BANDWIDTH OF FAST NEAR-INFRARED PHOTODETECTORS - A COMPARISON OF DIODES, PHOTOTRANSISTORS, AND PHOTOCONDUCTIVE DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) : 1420 - 1431

[6] PICOSECOND ALXGA1-XAS MODULATION-DOPED OPTICAL FIELD-EFFECT TRANSISTOR SAMPLING GATE [J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 682 - 684

[7] Bube R.H., 1960, PHOTOCONDUCTIVITY SO

[8] CARRUTHERS TF, 1984, PICOSECOND OPTOELECT, P339

[9] MODULATION-DOPED GA0.47IN0.53AS/AL0.48IN0.52AS PLANAR PHOTOCONDUCTIVE DETECTORS FOR 1.0-1.55-MUM APPLICATIONS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 308 - 310

[10] BIAS-FREE SELECTIVELY DOPED ALXGA1-XAS-GAAS PICOSECOND PHOTODETECTORS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 282 - 284

[1] ARAMS FR, 1970, SEMICONDUCT SEMIMET, V5, P409

[2] PICOSECOND OPTOELECTRONIC SWITCHING AND GATING IN SILICON [J]. APPLIED PHYSICS LETTERS, 1975, 26 (03) : 101 - 103

[3] GAAS MESFET - HIGH-SPEED OPTICAL DETECTOR [J]. ELECTRONICS LETTERS, 1977, 13 (07) : 193 - 193

[4] ON THE RESPONSE BEHAVIOR OF FAST PHOTOCONDUCTIVE OPTICAL PLANAR AND COAXIAL SEMICONDUCTOR-DETECTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) : 1431 - 1441

[5] GAIN AND BANDWIDTH OF FAST NEAR-INFRARED PHOTODETECTORS - A COMPARISON OF DIODES, PHOTOTRANSISTORS, AND PHOTOCONDUCTIVE DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) : 1420 - 1431

[6] PICOSECOND ALXGA1-XAS MODULATION-DOPED OPTICAL FIELD-EFFECT TRANSISTOR SAMPLING GATE [J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 682 - 684

[7] Bube R.H., 1960, PHOTOCONDUCTIVITY SO

[8] CARRUTHERS TF, 1984, PICOSECOND OPTOELECT, P339

[9] MODULATION-DOPED GA0.47IN0.53AS/AL0.48IN0.52AS PLANAR PHOTOCONDUCTIVE DETECTORS FOR 1.0-1.55-MUM APPLICATIONS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 308 - 310

[10] BIAS-FREE SELECTIVELY DOPED ALXGA1-XAS-GAAS PICOSECOND PHOTODETECTORS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 282 - 284