PICOSECOND ALXGA1-XAS MODULATION-DOPED OPTICAL FIELD-EFFECT TRANSISTOR SAMPLING GATE

被引：7

作者：

BETHEA, CG

CHEN, CY

CHO, AY

GARBINSKI, PA

LEVINE, BF

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 08期

关键词：

D O I：

10.1063/1.94071

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：682 / 684

页数：3

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[1] [Anonymous], UNPUB
[2] PICOSECOND OPTOELECTRONIC DETECTION, SAMPLING, AND CORRELATION-MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS
AUSTON, DH
JOHNSON, AM
SMITH, PR
BEAN, JC
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (04) : 371 - 373
[3] OPTO-ELECTRONIC PICOSECOND SAMPLING SYSTEM UTILIZING A MODULATED BARRIER PHOTO-DIODE
BETHEA, CG
CHEN, CY
CHO, AY
GARBINSKI, PA
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 591 - 594
[4] BIAS-FREE SELECTIVELY DOPED ALXGA1-XAS-GAAS PICOSECOND PHOTODETECTORS
CHEN, CY
CHO, AY
BETHEA, CG
GARBINSKI, PA
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 282 - 284
[5] ELECTRON MOBILITIES IN MODULATION DOPED GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY
CHENG, KY
CHO, AY
DRUMMOND, TJ
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 147 - 149
[6] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
DINGLE, R
STORMER, HL
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[7] HIGH MOBILITY ELECTRONS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROSTRUCTURES GROWN BY MBE AND THEIR APPLICATION TO HIGH-SPEED DEVICES
HIYAMIZU, S
MIMURA, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 455 - 463
[8] ELECTRON-DRIFT VELOCITY-MEASUREMENT IN COMPOSITIONALLY GRADED ALXGA1-XAS BY TIME-RESOLVED OPTICAL PICOSECOND REFLECTIVITY
LEVINE, BF
TSANG, WT
BETHEA, CG
CAPASSO, F
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (05) : 470 - 472
[9] HIGH ELECTRON-MOBILITY TRANSISTOR LOGIC
MIMURA, T
JOSHIN, K
HIYAMIZU, S
HIKOSAKA, K
ABE, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) : L598 - L600
[10] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS
MIMURA, T
HIYAMIZU, S
FUJII, T
NANBU, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227