ATOMIC MICROSTRUCTURE AND ELECTRONIC-PROPERTIES OF A-SINX-H DEPOSITED BY PECVD

被引：10

作者：

MAEDA, K

UMEZU, I

机构：

[1] Faculty of Industrial Science and Technology, Science University of Tokyo, Noda, Chiba

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80261-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Amorphous SiNx:H films of various composition x deposited by PECVD were investigated by means of XPS, optical and electric measurements. There are two regions of x with different electronic properties. The atomic microstructure is considered on the random bonding model. The change in the electronic band structure with x is determined to be consistent with the observed electronic properties.

引用

页码：883 / 886

页数：4

共 12 条

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