OPTICAL-PROPERTIES OF AMORPHOUS SINX(-H) FILMS

[1] THEORY OF MNOS MEMORY TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (05) : 511 - 518

[2] CISNEROS JI, 1983, THIN SOLID FILMS, V100, P155, DOI 10.1016/0040-6090(83)90471-6

[3] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SIXN1-X [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 53 (02): : 159 - 169

[4] DUNNETT B, IN PRESS PHIL MAG

[5] SUM RULE RELATING OPTICAL PROPERTIES TO CHARGE DISTRIBUTION [J]. PHYSICAL REVIEW B, 1970, 2 (04): : 973 - &

[6] ELECTRONIC-STRUCTURE OF HYDROGENATED AND UNHYDROGENATED AMORPHOUS SINX (0-LESS-THAN-X-LESS-THAN-1.6) - A PHOTOEMISSION-STUDY [J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1896 - 1910

[7] THE STRUCTURE OF PLASMA-DEPOSITED SILICON-NITRIDE FILMS DETERMINED BY INFRARED-SPECTROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1248 - 1254

[8] WIDE OPTICAL-GAP, PHOTOCONDUCTIVE A-SIXN1-X-H [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L811 - L813

[9] THE ELECTRONIC-PROPERTIES OF PLASMA-DEPOSITED FILMS OF HYDROGENATED AMORPHOUS SINX (O LESS-THAN X LESS-THAN 1.2) [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) : 1251 - 1258

[10] PREPARATION, CHARACTERIZATION AND APPLICATIONS OF SILICON-NITRIDE THIN-FILMS [J]. THIN SOLID FILMS, 1980, 65 (02) : 171 - 208

[1] THEORY OF MNOS MEMORY TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (05) : 511 - 518

[2] CISNEROS JI, 1983, THIN SOLID FILMS, V100, P155, DOI 10.1016/0040-6090(83)90471-6

[3] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SIXN1-X [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 53 (02): : 159 - 169

[4] DUNNETT B, IN PRESS PHIL MAG

[5] SUM RULE RELATING OPTICAL PROPERTIES TO CHARGE DISTRIBUTION [J]. PHYSICAL REVIEW B, 1970, 2 (04): : 973 - &

[6] ELECTRONIC-STRUCTURE OF HYDROGENATED AND UNHYDROGENATED AMORPHOUS SINX (0-LESS-THAN-X-LESS-THAN-1.6) - A PHOTOEMISSION-STUDY [J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1896 - 1910

[7] THE STRUCTURE OF PLASMA-DEPOSITED SILICON-NITRIDE FILMS DETERMINED BY INFRARED-SPECTROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1248 - 1254

[8] WIDE OPTICAL-GAP, PHOTOCONDUCTIVE A-SIXN1-X-H [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L811 - L813

[9] THE ELECTRONIC-PROPERTIES OF PLASMA-DEPOSITED FILMS OF HYDROGENATED AMORPHOUS SINX (O LESS-THAN X LESS-THAN 1.2) [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) : 1251 - 1258

[10] PREPARATION, CHARACTERIZATION AND APPLICATIONS OF SILICON-NITRIDE THIN-FILMS [J]. THIN SOLID FILMS, 1980, 65 (02) : 171 - 208