THE PROPAGATION OF LIGHT WAVES THROUGH OXYGEN IRRADIATION INDUCED DEPTH PROFILES OF THE COMPLEX REFRACTIVE-INDEX IN SILICON

被引：20

作者：

HEIDEMANN, KF

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 68卷 / 02期

关键词：

D O I：

10.1002/pssa.2210680232

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：607 / 617

页数：11

共 21 条

[1] STUDY OF SILICON-OXIDES PREPARED BY OXYGEN IMPLANTATION INTO SILICON [J].

BADAWI, MH ;

ANAND, KV .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (14) :1931-1942

[2] ELLIPSOMETRIC ANALYSIS OF REFRACTIVE-INDEX PROFILES PRODUCED BY ION-IMPLANTATION IN SILICA GLASS [J].

BAYLY, AR ;

TOWNSEND, PD .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1973, 6 (09) :1115-1128

[3]

Born M., 1999, PRINCIPLES OPTICS EL, DOI 10.1017/CBO9781139644181

[4] OXYGEN IMPURITY STATES IN AN AMORPHOUS-SILICON MATRIX [J].

CHING, WY .

PHYSICAL REVIEW B, 1980, 22 (06) :2816-2822

[5] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J].

CROWDER, BL ;

TITLE, RS ;

BRODSKY, MH ;

PETTIT, GD .

APPLIED PHYSICS LETTERS, 1970, 16 (05) :205-&

[6] TEM, AES AND XPS STUDIES OF SI LAYER ON BURIED SIO2 LAYER FORMED BY HIGH-DOSE OXYGEN ION-IMPLANTATION [J].

HAYASHI, T ;

MAEYAMA, S ;

YOSHII, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) :1111-1116

[7] CALCULATION OF OPTICAL REFLECTION AND TRANSMISSION COEFFICIENTS OF A MULTILAYER SYSTEM [J].

HEHL, K ;

WESCH, W .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (01) :181-188

[8] COMPLEX-REFRACTIVE-INDEX PROFILES OF 4-MEV GE ION-IRRADIATION DAMAGE IN SILICON [J].

HEIDEMANN, KF .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 44 (04) :465-485

[9]

HEIDEMANN KF, 1979, C SER I PHYSICS, V46, P492

[10]

HEIDEMANN KF, UNPUB

← 1 2 3 →