WAVELENGTH TUNING OF HIGH-SPEED INGAAS-GAAS-ALGAAS PSEUDOMORPHIC MQW LASERS VIA IMPURITY-FREE INTERDIFFUSION

被引:16
作者
BURKNER, S
RALSTON, JD
WEISSER, S
ROSENZWEIG, J
LARKINS, EC
SAH, RE
FLEISSNER, J
机构
[1] Fraunhofer-Institut fur Angewandte Festkörperphysik, 79108 Freiburg
[2] Spectra Diode Laboratories, San Jose, CA 95134–1365
[3] University of Nottingham, Department of Electrical and Electronic Engineering
关键词
D O I
10.1109/68.414662
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The impurity-free interdiffusion technique has been utilized to modify the operating wavelength of high-speed In0.35Ga0.65As-GaAs multiple quantum well lasers, Modulation bandwidths of up to 26 GHz (I-bfas = 50 mA) and modulation current efficiency factors of 5 GHz/mA(1/2) are demonstrated for 3 x 100 mu m(2) ridge waveguide lasers following wavelength shifts of 32 nm (34 meV). These results demonstrate the feasibility of fabricating monolithic multiple wavelength laser arrays in which each element is capable of low-bias-current direct modulation at bandwidths exceeding 20 GHz.
引用
收藏
页码:941 / 943
页数:3
相关论文
共 19 条
[1]   PROCESS PARAMETER DEPENDENCE OF IMPURITY-FREE INTERDIFFUSION IN GAAS/ALXGA1-XAS AND INYGA1-YAS/GAAS MULTIPLE-QUANTUM WELLS [J].
BURKNER, S ;
MAIER, M ;
LARKINS, EC ;
ROTHEMUND, W ;
OREILLY, EP ;
RALSTON, JD .
JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (07) :805-812
[2]  
BURKNER S, UNPUB INFLUENCE INTE
[3]   ATOM DIFFUSION AND IMPURITY-INDUCED LAYER DISORDERING IN QUANTUM WELL III-V SEMICONDUCTOR HETEROSTRUCTURES [J].
DEPPE, DG ;
HOLONYAK, N .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (12) :R93-R113
[4]   7.4 GBIT/S MONOLITHICALLY INTEGRATED GAAS/ALGAAS LASER DIODE-LASER DRIVER STRUCTURE [J].
HORNUNG, J ;
WANG, ZG ;
BRONNER, W ;
OLANDER, E ;
KOHLER, K ;
GANSER, P ;
RAYNOR, B ;
BENZ, W ;
LUDWIG, M .
ELECTRONICS LETTERS, 1993, 29 (19) :1694-1696
[5]   QUANTUM-WELL SHAPE MODIFICATION USING VACANCY GENERATION AND RAPID THERMAL ANNEALING [J].
KOTELES, ES ;
ELMAN, B ;
MELMAN, P ;
CHI, JY ;
ARMIENTO, CA .
OPTICAL AND QUANTUM ELECTRONICS, 1991, 23 (07) :S779-S787
[6]   IMPROVED PERFORMANCE FROM PSEUDOMORPHIC INYGA1-YAS-GAAS MQW LASERS WITH LOW GROWTH TEMPERATURE ALXGA1-XAS SHORT-PERIOD SUPERLATTICE CLADDING [J].
LARKINS, EC ;
BENZ, W ;
ESQUIVIAS, I ;
ROTHEMUND, W ;
BAEUMLER, M ;
WEISSER, S ;
SCHONFELDER, A ;
FLEISSNER, J ;
JANTZ, W ;
ROSENZWEIG, J ;
RALSTON, JD .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (01) :16-19
[7]   HIGH-QUALITY WAVELENGTH TUNED MULTIQUANTUM-WELL GAINAS/GAINASP LASERS FABRICATED USING PHOTOABSORPTION INDUCED DISORDERING [J].
MCKEE, A ;
MCLEAN, CJ ;
BRYCE, AC ;
DELARUE, RM ;
MARSH, JH ;
BUTTON, C .
APPLIED PHYSICS LETTERS, 1994, 65 (18) :2263-2265
[8]   TUNABLE (AL)GAAS LASERS USING IMPURITY-FREE PARTIAL INTERDIFFUSION [J].
OBRIEN, S ;
SHEALY, JR ;
CHAMBERS, FA ;
DEVANE, G .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (02) :1067-1069
[9]   INTERMIXING OF ALXGA1-XAS/GAAS SUPERLATTICES BY PULSED LASER IRRADIATION [J].
RALSTON, J ;
MORETTI, AL ;
JAIN, RK ;
CHAMBERS, FA .
APPLIED PHYSICS LETTERS, 1987, 50 (25) :1817-1819
[10]  
Ralston J. D., 1994, CLEO '94. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Vol.8. 1994 Technical Digest Series. Conference Edition (Cat. No.94CH3463-7), P275