HIGH-QUALITY WAVELENGTH TUNED MULTIQUANTUM-WELL GAINAS/GAINASP LASERS FABRICATED USING PHOTOABSORPTION INDUCED DISORDERING

被引：26

作者：

MCKEE, A ^{[1
]}

MCLEAN, CJ ^{[1
]}

BRYCE, AC ^{[1
]}

DELARUE, RM ^{[1
]}

MARSH, JH ^{[1
]}

BUTTON, C ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 18期

关键词：

D O I：

10.1063/1.112741

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Broad area oxide strip lasers have been fabricated from GaInAs/GaInAsP multiquantum well laser material which has undergone various degrees of intermixing by photoabsorption induced disordering. This process provides an effective way of altering the emission wavelength of lasers fabricated from a single epitaxial wafer, and we have demonstrated blue shifts of up to 160 nm in lasing spectra. The band gap tuned lasers are also assessed in terms of threshold current density, internal quantum efficiency, and internal loss and it is shown that good device performance is maintained. (c) 1994 American Institute of Physics.

引用

页码：2263 / 2265

页数：3

共 9 条

[1] SUPPRESSION OF BANDGAP SHIFTS IN GAAS/ALGAAS QUANTUM-WELLS USING STRONTIUM FLUORIDE CAPS [J].

BEAUVAIS, J ;

MARSH, JH ;

KEAN, AH ;

BRYCE, AC ;

BUTTON, C .

ELECTRONICS LETTERS, 1992, 28 (17) :1670-1672

[2] ATOM DIFFUSION AND IMPURITY-INDUCED LAYER DISORDERING IN QUANTUM WELL III-V SEMICONDUCTOR HETEROSTRUCTURES [J].

DEPPE, DG ;

HOLONYAK, N .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (12) :R93-R113

[3] CALCULATION OF AUGER RATES IN A QUANTUM WELL STRUCTURE AND ITS APPLICATION TO INGAASP QUANTUM WELL LASERS [J].

DUTTA, NK .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1236-1245

[4] VERY LOW THRESHOLD BURIED HETEROSTRUCTURE QUANTUM WELL LASERS BY LASER-ASSISTED DISORDERING [J].

EPLER, JE ;

THORNTON, RL ;

PAOLI, TL .

APPLIED PHYSICS LETTERS, 1988, 52 (17) :1371-1373

[5] IMPURITY INDUCED DISORDERING OF GAINAS QUANTUM-WELLS WITH BARRIERS OF ALGAINAS OR OF GAINASP [J].

MARSH, JH ;

BRADSHAW, SA ;

BRYCE, AC ;

GWILLIAM, R ;

GLEW, RW .

JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (12) :973-978

[6] LATERAL CONTROL OF THE BANDGAP IN GALNAS/GALNASP MQW STRUCTURES USING PHOTOABSORPTION-INDUCED DISORDERING [J].

MCLEAN, CJ ;

MCKEE, A ;

MARSH, JH ;

DELARUE, RM .

ELECTRONICS LETTERS, 1993, 29 (18) :1657-1659

[7] LAYER SELECTIVE DISORDERING BY PHOTOABSORPTION-INDUCED THERMAL-DIFFUSION IN INGAAS/INP BASED MULTIQUANTUM WELL STRUCTURES [J].

MCLEAN, CJ ;

MARSH, JH ;

DELARUE, RM ;

BRYCE, AC ;

GARRETT, B ;

GLEW, RW .

ELECTRONICS LETTERS, 1992, 28 (12) :1117-1119

[8] INTEGRATED EXTERNAL-CAVITY INGAAS INP LASERS USING CAP-ANNEALING DISORDERING [J].

MIYAZAWA, T ;

IWAMURA, H ;

NAGANUMA, M .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (05) :421-423

[9] INTERMIXING OF ALXGA1-XAS/GAAS SUPERLATTICES BY PULSED LASER IRRADIATION [J].

RALSTON, J ;

MORETTI, AL ;

JAIN, RK ;

CHAMBERS, FA .

APPLIED PHYSICS LETTERS, 1987, 50 (25) :1817-1819

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