IMPURITY INDUCED DISORDERING OF GAINAS QUANTUM-WELLS WITH BARRIERS OF ALGAINAS OR OF GAINASP

被引:27
作者
MARSH, JH
BRADSHAW, SA
BRYCE, AC
GWILLIAM, R
GLEW, RW
机构
[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND
[2] BNR EUROPE LTD,HARLOW CM17 9NA,ENGLAND
关键词
QUANTUM WELLS; INGAAS; DISORDERING;
D O I
10.1007/BF03030191
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Impurity induced disordering of GaInAs quantum well structures with barriers of AlGaInAs and of GaInAsP has been investigated using boron and fluorine. The impurities were introduced by ion implantation followed by thermal annealing. Annealing unimplanted P-based quaternary material at temperatures greater than 500-degrees-C caused a blue shift of the exciton peak. At annealing temperatures greater than 650-degrees-C red shifts in the exciton peak of unimplanted Al-based quaternary material were observed. Boron implantation caused small blue shifts of the exciton peak in both material systems at low annealing temperatures. Much larger blue shifts were observed in the fluorine implanted samples.
引用
收藏
页码:973 / 978
页数:6
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