TUNABLE (AL)GAAS LASERS USING IMPURITY-FREE PARTIAL INTERDIFFUSION

被引：8

作者：

OBRIEN, S

SHEALY, JR

CHAMBERS, FA

DEVANE, G

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

[2] AMOCO RES CTR,NAPERVILLE,IL 60566

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 02期

关键词：

D O I：

10.1063/1.350402

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Impurity-free interdiffusion has been used to fabricate single mode quantum well ridge lasers from the same (Al)GaAs epitaxial material which differ in emission wavelength by as much as 11.7 nm. This represents a shift of approximately 80 laser linewidths, as measured under pulsed conditions. Threshold currents for the interdiffused and nondiffused lasers are nearly identical. However, the differential quantum efficiencies of the most interdiffused lasers are a factor of 2 lower than nondiffused lasers. The interdiffusion coefficients for the quantum well laser structure are approximately a factor of 6 smaller than those observed for intrinsic GaAs multiple quantum wells.

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页码：1067 / 1069

页数：3

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