X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY OF RAPID THERMAL-PROCESSING ON SIO2 GAAS

被引：21

作者：

KATAYAMA, M ^{[1
]}

TOKUDA, Y ^{[1
]}

ANDO, N ^{[1
]}

INOUE, Y ^{[1
]}

USAMI, A ^{[1
]}

WADA, T ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL,DEPT ELECT & COMP ENGN,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 25期

关键词：

D O I：

10.1063/1.101544

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2559 / 2561

页数：3

共 12 条

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